Invention Grant
US07646659B2 Semiconductor device temperature sensor and semiconductor storage device
有权
半导体器件温度传感器和半导体存储器件
- Patent Title: Semiconductor device temperature sensor and semiconductor storage device
- Patent Title (中): 半导体器件温度传感器和半导体存储器件
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Application No.: US12350667Application Date: 2009-01-08
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Publication No.: US07646659B2Publication Date: 2010-01-12
- Inventor: Atsumasa Sako
- Applicant: Atsumasa Sako
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A semiconductor device temperature sensor produces a reference level for temperature detection from two or more reference levels of different temperatures to detect a temperature. The temperature sensor is applied for detecting the temperature of a semiconductor storage device having a memory unit which requires a refresh action. A refresh cycle control circuit provided in the semiconductor storage device controls the cycle of the refresh action for the memory unit in response to an output of the temperature sensor.
Public/Granted literature
- US20090116539A1 SEMICONDUCTOR DEVICE TEMPERATURE SENSOR AND SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2009-05-07
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