Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12325783Application Date: 2008-12-01
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Publication No.: US07646662B2Publication Date: 2010-01-12
- Inventor: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- Applicant: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JPP2001-324357 20011023
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
Public/Granted literature
- US20090097302A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-04-16
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