Invention Grant
- Patent Title: Pressure sensor stress isolation pedestal
- Patent Title (中): 压力传感器应力隔离基座
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Application No.: US11901750Application Date: 2007-09-19
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Publication No.: US07647835B2Publication Date: 2010-01-19
- Inventor: Jamie W. Speldrich
- Applicant: Jamie W. Speldrich
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agent Kermit D. Lopez; Luis M. Ortiz
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
A pressure sensor stress isolation pedestal including a pressure sensor mounted in a housing with a circuit board. The sensor is bonded to a relatively tall pedestal. The height of the pedestal creates a stiff mounting structure that isolates the sensor from mechanical stress. The pedestal is formed by making a recess or moat-like structure around the pressure sensor in the housing that supports the sensor. Preferred sensors are MEMS type Pressure Sensors.
Public/Granted literature
- US20090071260A1 Pressure sensor stress isolation pedestal Public/Granted day:2009-03-19
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