Invention Grant
US07648559B2 Method for fractional crystallisation of a metal 有权
金属分级结晶方法

Method for fractional crystallisation of a metal
Abstract:
The invention relates to a method for fractional crystallization of an at most partially solidified molten metal, in which a layer of at most partially solidified molten metal having an upper surface and a lower surface is divided into a series of compartments communicating with each other, in which the metal is stirred in at least some of the compartments, and in which crystals formed and/or existing in the layer of metal are selectively transported in a predetermined direction and molten metal is selectively transported in the opposite direction.
Public/Granted literature
Information query
Patent Agency Ranking
0/0