Invention Grant
US07648581B2 Substrate cleaning method, substrate cleaning apparatus, substrate processing system, substrate cleaning program and storage medium
有权
基板清洗方法，基板清洗装置，基板处理系统，基板清洗程序和存储介质
- Patent Title: Substrate cleaning method, substrate cleaning apparatus, substrate processing system, substrate cleaning program and storage medium
- Patent Title (中): 基板清洗方法，基板清洗装置，基板处理系统，基板清洗程序和存储介质
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Application No.: US11274117Application Date: 2005-11-16
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Publication No.: US07648581B2Publication Date: 2010-01-19
- Inventor: Tsuyoshi Moriya
- Applicant: Tsuyoshi Moriya
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-332080 20041116
- Main IPC: B08B3/12
- IPC: B08B3/12 ; B08B6/00 ; B08B7/00 ; C25F1/00
Abstract:
In a substrate cleaning method for cleaning a backside of a substrate on a surface of which a predetermined processing is performed, a two phase substance contacts the backside of the substrate, and a flow of the substance is generated near the backside of the substrate under a specified pressure. The two phase substance is a gas containing aerosol or a supercritical substance, and the specified pressure is higher than or equal to 133 Pa (1 Torr). Further, in the substrate cleaning method, a high-energy light may be irradiated on the backside of the substrate.
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