Invention Grant
- Patent Title: In Sm oxide sputtering target
- Patent Title (中): 在Sm氧化物溅射靶中
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Application No.: US11995640Application Date: 2006-06-21
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Publication No.: US07648657B2Publication Date: 2010-01-19
- Inventor: Kazuyoshi Inoue , Nobuo Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
- Applicant: Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2005-207513 20050715; JP2005-258740 20050907
- International Application: PCT/JP2006/312412 WO 20060621
- International Announcement: WO2007/010702 WO 20070125
- Main IPC: H01B1/08
- IPC: H01B1/08 ; C23C14/08
Abstract:
A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
Public/Granted literature
- US20090121199A1 IN SM OXIDE SPUTTERING TARGET Public/Granted day:2009-05-14
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