Invention Grant
- Patent Title: Cadmium tin oxide multi-layer laminate and producing method thereof
- Patent Title (中): 镉锡氧化物多层叠层及其制造方法
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Application No.: US11311317Application Date: 2005-12-20
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Publication No.: US07648783B2Publication Date: 2010-01-19
- Inventor: Tien-Heng Huang , Ren-Jye Wu , Wen-Hsuan Chao , Lih-Ping Wang , Hung-Chiao Cheng , Jassy Shian-Jy Wang , Shu-Hei Wang , John R. Rodgers
- Applicant: Tien-Heng Huang , Ren-Jye Wu , Wen-Hsuan Chao , Lih-Ping Wang , Hung-Chiao Cheng , Jassy Shian-Jy Wang , Shu-Hei Wang , John R. Rodgers
- Applicant Address: TW Hsinchu CA Ottawa, ON
- Assignee: Industrial Research Technology Institute,Toth Information System, Inc.
- Current Assignee: Industrial Research Technology Institute,Toth Information System, Inc.
- Current Assignee Address: TW Hsinchu CA Ottawa, ON
- Agency: Bacon & Thomas, PLLC
- Priority: TW93140292A 20041223
- Main IPC: B32B15/04
- IPC: B32B15/04 ; C23C14/00 ; C23C14/08
Abstract:
A cadmium tin oxide (Cd1−xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1−xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1−xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1−xSnxO; and (b) sputtering films of Cd1−xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
Public/Granted literature
- US20060141266A1 Cadmium tin oxide multi-layer laminate and producing method thereof Public/Granted day:2006-06-29
Information query
