Invention Grant
- Patent Title: Electron beam exposure method, hot spot detecting apparatus, semiconductor device manufacturing method, and computer program product
- Patent Title (中): 电子束曝光方法,热点检测装置,半导体器件制造方法和计算机程序产品
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Application No.: US11504666Application Date: 2006-08-16
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Publication No.: US07648809B2Publication Date: 2010-01-19
- Inventor: Tetsuro Nakasugi
- Applicant: Tetsuro Nakasugi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-236777 20050817
- Main IPC: G03C5/00
- IPC: G03C5/00 ; G03F9/00

Abstract:
An EB exposure method includes dividing drawing layer pattern to be transferred onto drawing layer by EB exposure and underlying pattern to be transferred onto an underlying layer of the drawing layer by the EB exposure respectively into unit regions, setting representative figure in each of the unit regions of the drawing and underlying layers, the representative figure set in each of the unit regions of the drawing layer corresponding to the drawing layer pattern of each of the unit regions of the drawing layer, the representative figure set in each of the unit regions of the underlying layer corresponding to the underlying layer pattern of each of the unit regions of the underlying layer, and obtaining influence of proximity effect of an arbitrary region of the drawing layer pattern, based on the representative figure that corresponds to the drawing and underlying layer patterns.
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