Invention Grant
- Patent Title: Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
- Patent Title (中): 浸没光刻系统中用于清洁半导体衬底的方法和装置
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Application No.: US12045290Application Date: 2008-03-10
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Publication No.: US07648819B2Publication Date: 2010-01-19
- Inventor: Steven J. Holmes , Mark C. Hakey , Toshiharu Furukawa , David V. Horak
- Applicant: Steven J. Holmes , Mark C. Hakey , Toshiharu Furukawa , David V. Horak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Steven Capella
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A method and apparatus for reduction and prevention of residue formation and removal of residues formed in an immersion lithography tool. The apparatus including incorporation of a cleaning mechanism within the immersion head of an immersion lithographic system or including a cleaning mechanism in a cleaning station of an immersion lithographic system.
Public/Granted literature
- US20090087795A1 METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE IN AN IMMERSION LITHOGRAPHY SYSTEM Public/Granted day:2009-04-02
Information query
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