Invention Grant
US07648854B2 Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same
有权
形成金属氧化物层的方法，使用其形成栅极结构的方法以及使用其形成电容器的方法
- Patent Title: Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same
- Patent Title (中): 形成金属氧化物层的方法，使用其形成栅极结构的方法以及使用其形成电容器的方法
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Application No.: US11985672Application Date: 2007-11-16
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Publication No.: US07648854B2Publication Date: 2010-01-19
- Inventor: Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
- Applicant: Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2006-0113747 20061117
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16 ; H01L21/20 ; H01L21/31 ; H01L21/469
Abstract:
Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
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