Invention Grant
- Patent Title: Device comprising an encapsulated microsystem and production method thereof
- Patent Title (中): 包含封装微系统的装置及其制造方法
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Application No.: US11573207Application Date: 2005-08-10
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Publication No.: US07648855B2Publication Date: 2010-01-19
- Inventor: Charlotte Gillot , Nicolas Sillon , Emmanuelle Lagoutte
- Applicant: Charlotte Gillot , Nicolas Sillon , Emmanuelle Lagoutte
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0451848 20040813
- International Application: PCT/FR2005/050665 WO 20050810
- International Announcement: WO2006/092474 WO 20060908
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50
Abstract:
A process for manufacturing a device including a packaged microsystem. The manufactured device is in a form of a plane wafer, the microsystem being buried in the wafer. Therefore, the process is used to make a compound that may be used as a basis for other micro technology processes. Moreover, the process co-integrates electronic compounds when the device is being manufactured. The device is particularly suitable for MEMS, and particularly radiofrequency resonators.
Public/Granted literature
- US20080067655A1 Device Comprising an Encapsulated Microsystem and Production Method Thereof Public/Granted day:2008-03-20
Information query
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