Invention Grant
US07648864B2 Semiconductor structure including mixed rare earth oxide formed on silicon
有权
包括在硅上形成的混合稀土氧化物的半导体结构
- Patent Title: Semiconductor structure including mixed rare earth oxide formed on silicon
- Patent Title (中): 包括在硅上形成的混合稀土氧化物的半导体结构
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Application No.: US12197079Application Date: 2008-08-22
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Publication No.: US07648864B2Publication Date: 2010-01-19
- Inventor: Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
- Applicant: Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/76 ; H01L21/302
Abstract:
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
Public/Granted literature
- US20080308831A1 SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON Public/Granted day:2008-12-18
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