Invention Grant
- Patent Title: Nitride-encapsulated FET (NNCFET)
- Patent Title (中): 氮化物封装的FET（NNCFET）
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Application No.: US12142394Application Date: 2008-06-19
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Publication No.: US07648880B2Publication Date: 2010-01-19
- Inventor: Kevin K. Chan , Hussein I. Hanafi , Paul M. Solomon
- Applicant: Kevin K. Chan , Hussein I. Hanafi , Paul M. Solomon
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Parcello, Esq.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. In the present invention, self-aligned isolation regions are provided to reduce the parasitic capacitance in the DGFET structure. Additionally, the present invention encapsulates the silicon-containing channel layer to enable the back-gate to be oxidized to a greater extent thereby reducing the parasitic capacitance of the structure even further.
Public/Granted literature
- US20080286930A1 NITRIDE-ENCAPSULATED FET (NNCFET) Public/Granted day:2008-11-20
Information query
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