Invention Grant
US07648884B2 Semiconductor device with integrated resistive element and method of making
失效
具有集成电阻元件的半导体器件及其制造方法
- Patent Title: Semiconductor device with integrated resistive element and method of making
- Patent Title (中): 具有集成电阻元件的半导体器件及其制造方法
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Application No.: US11680199Application Date: 2007-02-28
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Publication No.: US07648884B2Publication Date: 2010-01-19
- Inventor: Byoung W. Min , James K. Schaeffer , David C. Sing
- Applicant: Byoung W. Min , James K. Schaeffer , David C. Sing
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Kim-Marie Vo; Robert L. King
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A resistive device (44) and a transistor (42) are formed. Each uses a portion of a metal layer (18) that is formed at the same time and thus additional process steps are avoided to remove the metal from the resistive device. The metal used in the resistive device is selectively treated to increase the resistance in the resistive device. A polycrystalline semiconductor material layer (34) overlies the metal layer in the resistive device. The combination of these layers provides the resistive device. In one form the metal is treated after formation of the polycrystalline semiconductor material layer. In one form the metal treatment involves an implant of a species, such as oxygen, to increase the resistivity of the metal. Various transistor structures are formed using the untreated portion of the metal layer as a control electrode.
Public/Granted literature
- US20080206939A1 SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTIVE ELEMENT AND METHOD OF MAKING Public/Granted day:2008-08-28
Information query
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