Method to fabricate gate electrodes

Invention Grant

US07648898B2 Method to fabricate gate electrodes 失效

Title translation: 制造栅电极的方法

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Patent Title: Method to fabricate gate electrodes
Patent Title (中): 制造栅电极的方法
Application No.: US12033487

Application Date: 2008-02-19
Publication No.: US07648898B2

Publication Date: 2010-01-19
Inventor: Srinivasa R. Banna
Applicant: Srinivasa R. Banna
Applicant Address: US CA Los Gatos
Assignee: DSM Solutions, Inc.
Current Assignee: DSM Solutions, Inc.
Current Assignee Address: US CA Los Gatos
Agency: Baker Botts L.L.P.
Main IPC: H01L21/3205
IPC: H01L21/3205

Abstract:

A method for fabricating a semiconductor device comprises depositing a first layer of oxide on at least a portion of a channel of a transistor. The method further comprises depositing a layer of nitride on the first layer of oxide and etching at least a portion of the layer of nitride to the first layer of oxide. The method further comprises depositing a second layer of oxide and planarizing the oxide to expose at least a portion of the layer of nitride. The method further comprises stripping at least a portion of the layer of nitride to create one or more notches and removing at least a portion of the first layer of oxide. The method further comprises depositing a layer of polysilicon, wherein at least a portion of the layer of polysilicon is deposited into at least one of the one or more notches.

Abstract(Chinese):

一种用于制造半导体器件的方法包括在晶体管的沟道的至少一部分上沉积第一层氧化物。该方法还包括在第一氧化层上沉积氮化物层，并将氮化层的至少一部分蚀刻到第一氧化层上。该方法还包括沉积第二层氧化物并使氧化物平坦化以暴露氮化物层的至少一部分。该方法还包括剥离氮化层的至少一部分以产生一个或多个凹口并去除第一层氧化物的至少一部分。所述方法还包括沉积多晶硅层，其中所述多晶硅层的至少一部分沉积到所述一个或多个凹口中的至少一个中。

Public/Granted literature

US20090206336A1 Method to fabricate gate electrodes Public/Granted day:2009-08-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）