Invention Grant
- Patent Title: Manufacturing method of redistribution circuit structure
- Patent Title (中): 再分配电路结构的制造方法
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Application No.: US12352592Application Date: 2009-01-12
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Publication No.: US07648902B2Publication Date: 2010-01-19
- Inventor: Xuan-Feng Lu
- Applicant: Xuan-Feng Lu
- Applicant Address: BM Hamilton
- Assignee: ChipMOS Technologies (Bermuda) Ltd.
- Current Assignee: ChipMOS Technologies (Bermuda) Ltd.
- Current Assignee Address: BM Hamilton
- Agency: Jianq Chyun IP Office
- Priority: CN200710000954 20070115
- Main IPC: H01L23/485
- IPC: H01L23/485

Abstract:
A method of manufacturing a redistribution circuit structure is provided. First, a substrate is provided. The substrate has a plurality of pads and a passivation layer. The passivation layer has a plurality of first openings exposing a portion of each of the pads, respectively. A first patterned photoresist layer is formed on the passivation layer. The first patterned photoresist layer has a plurality of second openings exposing a portion of each of the pads. A plurality of first bumps is formed in the second openings, respectively. An under ball metal (UBM) material layer is formed over the substrate to cover the first patterned photoresist layer and the first bumps. A plurality of conductive lines is formed on the UBM material layer. The UBM material layer is patterned to form a plurality of UBM layers using the conductive lines as a mask.
Public/Granted literature
- US20090130839A1 MANUFACTURING METHOD OF REDISTRIBUTION CIRCUIT STRUCTURE Public/Granted day:2009-05-21
Information query
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