Invention Grant
- Patent Title: Method of manufacturing opening and via opening
- Patent Title (中): 制造开口和通孔的方法
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Application No.: US11748801Application Date: 2007-05-15
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Publication No.: US07648910B2Publication Date: 2010-01-19
- Inventor: Ching-Jen Han , Wen-Shun Lo , Yung-Han Chiu
- Applicant: Ching-Jen Han , Wen-Shun Lo , Yung-Han Chiu
- Applicant Address: TW Hsinchu
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW95149977A 20061229
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/311
Abstract:
A method of manufacturing an opening is described. First, a substrate including a conductive portion and a dielectric layer both formed thereon is provided. The conductive portion at least includes a conductive layer and a passivation layer from bottom-up, and the dielectric layer covers the conductive portion. A first dry etching step is then performed to form an opening on the passivation layer by using a reactive gas containing a high polymer gas. The bottom of the opening has an initial dimension, and an obtuse angle is included by the bottom of the opening and an inner sidewall of the opening. Next, an opening enlarging step is performed to reach a target dimension of the bottom of the opening. The target dimension is larger than the initial dimension and to the least extent the conductive layer is not exposed by the opening.
Public/Granted literature
- US20080160756A1 METHOD OF MANUFACTURING OPENING AND VIA OPENING Public/Granted day:2008-07-03
Information query
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