Invention Grant
- Patent Title: Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth
- Patent Title (中): 用薄膜生长的温度控制阶段的薄金属和介电膜的无电沉积方法
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Application No.: US11533042Application Date: 2006-09-19
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Publication No.: US07648913B2Publication Date: 2010-01-19
- Inventor: Igor C. Ivanov
- Applicant: Igor C. Ivanov
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Daffer McDaniel, LLP
- Agent Mollie E. Lettang; Kevin L. Daffer
- Main IPC: H01L21/44
- IPC: H01L21/44 ; B05D1/18
Abstract:
A film formation method is provided which includes positioning an object within an electroless deposition apparatus having means for instantaneous temperature control of the object and electrolessly depositing a material upon the object. More specifically, the method includes instantaneously changing the temperature of the object by the means of instantaneous control at one or more predetermined times during the step of electrolessly depositing the material, wherein the predetermined times correspond to different film-growth stages of the material.
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