Method of pattern formation in semiconductor fabrication

Invention Grant

US07648918B2 Method of pattern formation in semiconductor fabrication 有权

Title translation: 半导体制造中图案形成的方法

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Patent Title: Method of pattern formation in semiconductor fabrication
Patent Title (中): 半导体制造中图案形成的方法
Application No.: US11841485

Application Date: 2007-08-20
Publication No.: US07648918B2

Publication Date: 2010-01-19
Inventor: George Liu , Kuei Shun Chen , Vencent Chang , Shang-Wen Chang
Applicant: George Liu , Kuei Shun Chen , Vencent Chang , Shang-Wen Chang
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/467
IPC: H01L21/467

Method of pattern formation in semiconductor fabrication

Abstract:

Provided is a method of fabricating a semiconductor device. The method includes providing a substrate, forming a photo acid generator (PAG) layer on the substrate, exposing the PAG layer to radiation, and forming a photoresist layer on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.

Abstract(Chinese):

提供一种制造半导体器件的方法。该方法包括提供衬底，在衬底上形成光酸产生剂（PAG）层，将PAG层暴露于辐射，以及在曝光的PAG层上形成光致抗蚀剂层。暴露的PAG层产生酸。酸分解形成的光致抗蚀剂层的一部分。在一个实施例中，PAG层包括有机BARC。光致抗蚀剂层的分解部分可以用作掩模元件。

Public/Granted literature

US20090053899A1 METHOD OF PATTERN FORMATION IN SEMICONDUCTOR FABRICATION Public/Granted day:2009-02-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/465	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/469）
H01L21/467	.......应用掩膜的