Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11858516Application Date: 2007-09-20
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Publication No.: US07648920B2Publication Date: 2010-01-19
- Inventor: Shinichi Arakawa
- Applicant: Shinichi Arakawa
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JP2006-270360 20061002
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a semiconductor device includes the steps of: forming recesses (a via hole and wiring grooves) in a insulation film; forming a seal layer on inside surfaces of the recesses by using a gas based on a silane having an alkyl group as a precursor; applying EB-cure or UV-cure to the seal layer; and filling up the recesses with a conductor.
Public/Granted literature
- US20080081468A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-04-03
Information query
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