Invention Grant
- Patent Title: Fluorocarbon film and method for forming same
- Patent Title (中): 氟碳膜及其形成方法
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Application No.: US10536774Application Date: 2004-11-09
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Publication No.: US07648922B2Publication Date: 2010-01-19
- Inventor: Tatsuru Shirafuji , Kunihide Tachibana
- Applicant: Tatsuru Shirafuji , Kunihide Tachibana
- Applicant Address: JP Kyoto JP Tokyo
- Assignee: Kyoto University,Zeon Corporation
- Current Assignee: Kyoto University,Zeon Corporation
- Current Assignee Address: JP Kyoto JP Tokyo
- Agent Charles A. Muserlian
- Priority: JP2004-214543 20040722
- International Application: PCT/JP2004/016606 WO 20041109
- International Announcement: WO2006/008841 WO 20060126
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
The major objective is to provide a fluorocarbon film wherein fine voids are formed by a step (SA1) for introducing a mixed gas containing a first carbon fluoride gas and a second carbon fluoride gas on a substrate placed inside a chamber, and depositing a fluorocarbon film on the substrate; and a step (SA2) for forming voids in the fluorocarbon film by selectively removing volatile components contained in the fluorocarbon film are included and especially in the step (SA2) for forming voids, it is preferable to include a step for cleaning the fluorocarbon film with a supercritical fluid.
Public/Granted literature
- US20070020951A1 Fluorocarbon film and method for forming same Public/Granted day:2007-01-25
Information query
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