Invention Grant
US07648926B2 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
有权
使用金属二酮和/或酮亚胺形成金属氧化物的系统和方法
- Patent Title: Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
- Patent Title (中): 使用金属二酮和/或酮亚胺形成金属氧化物的系统和方法
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Application No.: US11485770Application Date: 2006-07-13
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Publication No.: US07648926B2Publication Date: 2010-01-19
- Inventor: Brian A. Vaartstra
- Applicant: Brian A. Vaartstra
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands.
Public/Granted literature
- US20060252279A1 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines Public/Granted day:2006-11-09
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