Invention Grant
- Patent Title: Nano wires and method of manufacturing the same
- Patent Title (中): 纳米线和制造方法相同
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Application No.: US11369859Application Date: 2006-03-08
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Publication No.: US07649192B2Publication Date: 2010-01-19
- Inventor: Byoung-lyong Choi , Eun-kyung Lee
- Applicant: Byoung-lyong Choi , Eun-kyung Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2005-0019579 20050309
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
Public/Granted literature
- US20060212975A1 Nano wires and method of manufacturing the same Public/Granted day:2006-09-21
Information query
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