Nitride semiconductor free-standing substrate

Invention Grant

US07649194B2 Nitride semiconductor free-standing substrate 有权

Title translation: 氮化物半导体自立式基板

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Patent Title: Nitride semiconductor free-standing substrate
Patent Title (中): 氮化物半导体自立式基板
Application No.: US11541790

Application Date: 2006-10-03
Publication No.: US07649194B2

Publication Date: 2010-01-19
Inventor: Takehiro Yoshida
Applicant: Takehiro Yoshida
Applicant Address: JP Tokyo
Assignee: Hitachi Cable, Ltd.
Current Assignee: Hitachi Cable, Ltd.
Current Assignee Address: JP Tokyo
Agency: Foley & Lardner LLP
Priority: JP2006-164573 20060614
Main IPC: H01L29/12
IPC: H01L29/12 ; H01L31/12 ; H01L33/00

Abstract:

A nitride semiconductor free-standing substrate formed of a free-standing nitride-based compound semiconductor crystal that has a variation in lattice constant of ±12 ppm or less.

Abstract(Chinese):

由具有±12ppm以下的晶格常数变化的自立式氮化物系化合物半导体晶体形成的氮化物半导体自立式基板。

Public/Granted literature

US20070290228A1 Nitride semiconductor free-standing substrate Public/Granted day:2007-12-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的