Invention Grant
US07649201B2 Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels 有权
提高光电二极管传感器,以增加缩放像素的填充因子和量子效率

Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
Abstract:
An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.
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