Invention Grant
US07649201B2 Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
有权
提高光电二极管传感器,以增加缩放像素的填充因子和量子效率
- Patent Title: Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
- Patent Title (中): 提高光电二极管传感器,以增加缩放像素的填充因子和量子效率
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Application No.: US11399372Application Date: 2006-04-07
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Publication No.: US07649201B2Publication Date: 2010-01-19
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/06
- IPC: H01L31/06

Abstract:
An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.
Public/Granted literature
- US20060175641A1 Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels Public/Granted day:2006-08-10
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