Invention Grant
US07649202B2 Transistor, method of fabricating the same, and light emitting display comprising the same
有权
晶体管及其制造方法以及包含该晶体管的发光显示器
- Patent Title: Transistor, method of fabricating the same, and light emitting display comprising the same
- Patent Title (中): 晶体管及其制造方法以及包含该晶体管的发光显示器
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Application No.: US11110962Application Date: 2005-04-21
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Publication No.: US07649202B2Publication Date: 2010-01-19
- Inventor: Keun-Soo Lee
- Applicant: Keun-Soo Lee
- Applicant Address: KR Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2004-0048321 20040625
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A light emitting display comprises: at least one first metal layer; a second metal layer crossing the first metal layer and having a first width; a light emitting device formed adjacent to a region where the first metal layer and the second metal layer cross each other; and a pixel circuit including at least one transistor which causes the light emitting device to emit light. The transistor comprises a semiconductor layer having a second width greater than the first width. With this configuration, in the light emitting display of the present invention, the semiconductor layer of the transistor is formed in a region where the source/drain metal layer and the gate metal layer cross each other, and has a width greater than that of the source/drain metal layer, so that the source/drain metal layer is disposed within the width of the semiconductor layer. Thus, a tip of the gate metal layer, formed in the grain and the pattern edge of the semiconductor layer, is not disposed within the region overlapping the source/drain metal layer so that generation of static electricity between the gate metal layer and the source/drain metal layer is prevented.
Public/Granted literature
- US20050287750A1 Transistor, method of fabricating the same, and light emitting display comprising the same Public/Granted day:2005-12-29
Information query
IPC分类: