Invention Grant
- Patent Title: ESD protection system for multiple-domain integrated circuits
- Patent Title (中): 多域集成电路的ESD保护系统
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Application No.: US11252468Application Date: 2005-10-17
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Publication No.: US07649214B2Publication Date: 2010-01-19
- Inventor: Ker-Min Chen
- Applicant: Ker-Min Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H01L23/60
- IPC: H01L23/60
Abstract:
An integrated circuit system includes a first device in a first power domain, and a second device coupled to the first device in a second power domain. A circuit module is coupled between the first device and a power supply voltage or between the first device and a complementary power supply voltage in the first power domain for increasing an impedance against an ESD current flowing from the first device to the second device during an ESD event.
Public/Granted literature
- US20070085144A1 ESD protection system for multiple-domain integrated circuits Public/Granted day:2007-04-19
Information query
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