Invention Grant
- Patent Title: III-nitride device passivation and method
- Patent Title (中): III族氮化物器件钝化和方法
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Application No.: US11004212Application Date: 2004-12-03
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Publication No.: US07649215B2Publication Date: 2010-01-19
- Inventor: Robert Beach
- Applicant: Robert Beach
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/778
- IPC: H01L29/778

Abstract:
An embodiment of a III-nitride semiconductor device and method for making the same may include a low resistive passivation layer that permits the formation of device contacts without damage to the III-nitride material during high temperature processing. The passivation layer may be used to passivate the entire device. The passivation layer may also be provided in between contacts and active layers of the device to provide a low resistive path for current conduction. The passivation process may be used with any type of device, including FETs, rectifiers, schottky diodes and so forth, to improve breakdown voltage and prevent field crowding effects near contact junctions. The passivation layer may be activated with a low temperature anneal that does not impact the III-nitride device regarding outdiffusion.
Public/Granted literature
- US20060006413A1 III-Nitride device passivation and method Public/Granted day:2006-01-12
Information query
IPC分类: