Invention Grant
US07649239B2 Dielectric spacers for metal interconnects and method to form the same
有权
用于金属互连的电介质隔离件及其形成方法
- Patent Title: Dielectric spacers for metal interconnects and method to form the same
- Patent Title (中): 用于金属互连的电介质隔离件及其形成方法
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Application No.: US11429165Application Date: 2006-05-04
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Publication No.: US07649239B2Publication Date: 2010-01-19
- Inventor: Makarem A. Hussein , Boyan Boyanov
- Applicant: Makarem A. Hussein , Boyan Boyanov
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/331 ; H01L21/76 ; H01L21/4763
Abstract:
A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.
Public/Granted literature
- US20070257368A1 Dielectric spacers for metal interconnects and method to form the same Public/Granted day:2007-11-08
Information query
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