Invention Grant
- Patent Title: Semiconductor memory device with vertical fuse
- Patent Title (中): 具有垂直保险丝的半导体存储器件
-
Application No.: US11704300Application Date: 2007-02-09
-
Publication No.: US07649240B2Publication Date: 2010-01-19
- Inventor: Kwang-duk Kim , Jong-hyun Ahn , Jeong-ho Shin
- Applicant: Kwang-duk Kim , Jong-hyun Ahn , Jeong-ho Shin
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0012681 20060209
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.
Public/Granted literature
- US20070181969A1 Semiconductor memory device and method of fabricating the same Public/Granted day:2007-08-09
Information query
IPC分类:
