Invention Grant
US07649242B2 Programmable resistive memory cell with a programmable resistance layer
失效
具有可编程电阻层的可编程电阻存储单元
- Patent Title: Programmable resistive memory cell with a programmable resistance layer
- Patent Title (中): 具有可编程电阻层的可编程电阻存储单元
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Application No.: US11452417Application Date: 2006-06-14
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Publication No.: US07649242B2Publication Date: 2010-01-19
- Inventor: Klaus-Dieter Ufert
- Applicant: Klaus-Dieter Ufert
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A programmable resistive memory cell comprising a lower electrode, a programmable resistance layer, and an upper electrode, wherein a lower mask is arranged between the lower electrode and the programmable resistance layer and an upper mask is arranged between the programmable resistance layer and the upper electrode, and wherein the lower mask and the upper mask comprise current-inhibiting regions.
Public/Granted literature
- US20070267667A1 Programmable resistive memory cell with a programmable resistance layer Public/Granted day:2007-11-22
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