Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11512228Application Date: 2006-08-30
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Publication No.: US07649253B2Publication Date: 2010-01-19
- Inventor: Keisuke Sato
- Applicant: Keisuke Sato
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2005-281145 20050928
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
A semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first semiconductor chip), semiconductor chips 30 (second semiconductor chips) and a heat sink 40. Semiconductor chips 20 and 30 are mounted on the substrate 10. The level of the top surface of the semiconductor chip 20 on the substrate 10 is lower than the level of the top surface of the semiconductor chip 30. A heat sink 40 is fixed to the semiconductor chip 20. Among the semiconductor chip 20 and the semiconductor chips 30, only above the semiconductor chip 20 is provided with the heat sink 40.
Public/Granted literature
- US20070069370A1 Semiconductor device Public/Granted day:2007-03-29
Information query
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