Invention Grant
- Patent Title: Discrete placement of radiation sources on integrated circuit devices
- Patent Title (中): 辐射源在集成电路设备上的离散放置
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Application No.: US12051881Application Date: 2008-03-20
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Publication No.: US07649257B2Publication Date: 2010-01-19
- Inventor: Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
- Applicant: Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Louis J. Percello
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
Public/Granted literature
- US20090236699A1 DISCREET PLACEMENT OF RADIATION SOURCES ON INTEGRATED CIRCUIT DEVICES Public/Granted day:2009-09-24
Information query
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