Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11197360Application Date: 2005-08-05
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Publication No.: US07649258B2Publication Date: 2010-01-19
- Inventor: Tatsuya Usami , Koichi Ohto
- Applicant: Tatsuya Usami , Koichi Ohto
- Applicant Address: JP Kanagawa
- Assignee: Nec Electronics Corporation
- Current Assignee: Nec Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2004-239578 20040819
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
Propagation of a crack in a semiconductor device is to be suppressed, thus to protect an element forming region. An interface reinforcing film is provided so as to cover a sidewall of a concave portion that penetrates a SiCN film and a SiOC film formed on a silicon substrate. The interface reinforcing film is integrally and continuously formed with another SiOC film, and includes an air gap.
Public/Granted literature
- US20060038297A1 Semiconductor device Public/Granted day:2006-02-23
Information query
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