Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US11424891Application Date: 2006-06-19
-
Publication No.: US07649260B2Publication Date: 2010-01-19
- Inventor: Akinori Shindo , Masatoshi Tagaki , Hideaki Kurita
- Applicant: Akinori Shindo , Masatoshi Tagaki , Hideaki Kurita
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-197926 20050706; JP2006-074731 20060317
- Main IPC: H01L23/532
- IPC: H01L23/532

Abstract:
A semiconductor device including: a semiconductor layer including an active region and an isolation region provided around the active region; an element formed in the active region; an interlayer dielectric formed above the semiconductor layer; and an electrode pad formed above the interlayer dielectric and having a rectangular planar shape having a short side and a long side, the electrode pad at least partially covering the element when viewed from a top side, and the semiconductor layer positioned in a specific range outward from a line extending vertically downward from the short side of the electrode pad being a forbidden region.
Public/Granted literature
- US20070007599A1 SEMICONDUCTOR DEVICE Public/Granted day:2007-01-11
Information query
IPC分类: