Invention Grant
US07649272B2 Arrangement of an electrical component placed on a substrate, and method for producing the same 有权
放置在基板上的电气部件的布置及其制造方法

  • Patent Title: Arrangement of an electrical component placed on a substrate, and method for producing the same
  • Patent Title (中): 放置在基板上的电气部件的布置及其制造方法
  • Application No.: US10566438
    Application Date: 2004-07-12
  • Publication No.: US07649272B2
    Publication Date: 2010-01-19
  • Inventor: Franz AuerbachKarl Weidner
  • Applicant: Franz AuerbachKarl Weidner
  • Applicant Address: DE Munich
  • Assignee: Siemens Aktiengesellschaft
  • Current Assignee: Siemens Aktiengesellschaft
  • Current Assignee Address: DE Munich
  • Agency: Staas & Halsey LLP
  • Priority: DE10335155 20030731
  • International Application: PCT/EP2004/051460 WO 20040712
  • International Announcement: WO2005/013358 WO 20050210
  • Main IPC: H01L23/29
  • IPC: H01L23/29
Arrangement of an electrical component placed on a substrate, and method for producing the same
Abstract:
An electrical component is placed on a substrate. At least one film comprising a plastic material is connected to the component and to the substrate in such a way that a surface contour defined by the component and the substrate is represent is represented in a surface contour of the part of the film. Said film is laminated onto the component and the substrate in such a way that the film follows the topology of the arrangement consisting of the component and the substrate. Said film is in contact with the component and the substrate in a positive and non-positive manner, and comprises a composite material containing a filler that is different to the plastic material. The processability and electrical properties of the film are influenced by the filler or the composite material obtained thereby. In this way, other functions can be integrated into the film. Said component is, for example, a power semiconductor component. An electrically insulating and thermoconductive film is used, for example. A contact surface of the power semiconductor is electrically contracted through the film. The thermal conductivity of the film enables heat created during the operation of the power semiconductor component to be efficiently carried away.
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