Invention Grant
US07649380B2 Logic circuits with electric field relaxation transistors and semiconductor devices having the same
失效
具有电场弛豫晶体管和具有其的半导体器件的逻辑电路
- Patent Title: Logic circuits with electric field relaxation transistors and semiconductor devices having the same
- Patent Title (中): 具有电场弛豫晶体管和具有其的半导体器件的逻辑电路
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Application No.: US11902263Application Date: 2007-09-20
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Publication No.: US07649380B2Publication Date: 2010-01-19
- Inventor: Chan-Young Kim , Jun-Hee Lim , Doo-Young Kim , Jun-Hyung Kim
- Applicant: Chan-Young Kim , Jun-Hee Lim , Doo-Young Kim , Jun-Hyung Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0121571 20061204
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003 ; H03K19/20
Abstract:
In a logic circuit, a first switching device is connected between a first voltage and an output terminal through which an output signal is output. The switching device is selectively activated and deactivated based on an input signal. A second switching device is connected to a ground voltage and is selectively activated and deactivated based on the input signal. A control circuit outputs a control signal in response to the input signal. The control signal has a first voltage level during a first time period in which a state of the input signal changes, and has a second voltage level during a second time period in which a state of the input signal is constant. The second voltage level is lower than the first voltage level. A field relaxation circuit is connected between the terminal through which the output signal is output.
Public/Granted literature
- US20080129340A1 Logic circuits with electric field relaxation transistors and semiconductor devices having the same Public/Granted day:2008-06-05
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