Invention Grant
- Patent Title: Level conversion circuit
- Patent Title (中): 电平转换电路
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Application No.: US12000608Application Date: 2007-12-14
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Publication No.: US07649381B2Publication Date: 2010-01-19
- Inventor: Hiroki Yamashita , Fumio Yuuki , Ryo Nemoto , Hisaaki Kanai , Keiichi Yamamoto
- Applicant: Hiroki Yamashita , Fumio Yuuki , Ryo Nemoto , Hisaaki Kanai , Keiichi Yamamoto
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2006-353595 20061228
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A level conversion circuit capable of realizing low-power/high-speed operation and suppression of variations in input/output characteristics due to variations in source voltage and temperature and device variation. The level conversion circuit comprises: a source follower circuit including a first transistor to input an AC signal of CML level thereto and a second transistor to input a control voltage thereto; and a control-voltage generating circuit to generate the control voltage to be inputted to the second transistor. The control-voltage generating circuit comprises: a replica source follower circuit which is a replica of the source follower circuit including a third transistor to input a central voltage of CML level thereto and a fourth transistor to input the control voltage thereto; and a comparator which controls the control voltage, thereby equalizing an output voltage of the replica source follower and a threshold voltage of a CMOS circuit.
Public/Granted literature
- US20080157816A1 Level conversion circuit Public/Granted day:2008-07-03
Information query
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