Invention Grant
US07649386B2 Field programmable gate array utilizing dedicated memory stacks in a vertical layer format
有权
利用垂直层格式的专用存储器堆栈的现场可编程门阵列
- Patent Title: Field programmable gate array utilizing dedicated memory stacks in a vertical layer format
- Patent Title (中): 利用垂直层格式的专用存储器堆栈的现场可编程门阵列
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Application No.: US11897938Application Date: 2007-08-31
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Publication No.: US07649386B2Publication Date: 2010-01-19
- Inventor: Volkan H. Ozguz , Randolph S. Carlson , Keith D. Gann , John Leon , W. Eric Boyd
- Applicant: Volkan H. Ozguz , Randolph S. Carlson , Keith D. Gann , John Leon , W. Eric Boyd
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H03K19/00

Abstract:
A field programmable gate array, an access lead network coupled to the FPGA, and a plurality of memories electrically coupled to the access lead network. The FPGA, access lead network, and plurality of memories are arranged and configured to operate with a variable word width, namely with a word width between 1 and a maximum number of bits. The absolute maximum word width may be as large as m.times.N where m is the number of word width bits per memory chip and N is the number of memory chips.
Public/Granted literature
- US20080074144A1 Field programmable gate array utilizing dedicated memory stacks in a vertical layer format Public/Granted day:2008-03-27
Information query
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