Invention Grant
US07649389B2 Delay locked loop circuit, semiconductor device having the same and method of controlling the same
有权
延迟锁定环电路,具有相同的半导体器件及其控制方法
- Patent Title: Delay locked loop circuit, semiconductor device having the same and method of controlling the same
- Patent Title (中): 延迟锁定环电路,具有相同的半导体器件及其控制方法
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Application No.: US11978636Application Date: 2007-10-30
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Publication No.: US07649389B2Publication Date: 2010-01-19
- Inventor: Seung-Jun Bae
- Applicant: Seung-Jun Bae
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.c.
- Priority: KR10-2006-0105479 20061030
- Main IPC: H03L7/06
- IPC: H03L7/06

Abstract:
A delay locked loop (DLL) circuit includes a basic loop, a coarse loop, a delay model and a fine loop. The basic loop generates a plurality of first clock signals, based at least in part on an input clock signal, a feedback clock signal and a fine loop output signal. The first clock signals respectively have a phase difference. The coarse loop generates a plurality of output clock signals, based at least in part on the input clock signal, the feedback clock signal and the first clock signals. The plurality of output clock signals respectively have a phase difference. The delay model generates the feedback clock signal by delaying one of the output clock signals by a first time period. The fine loop generates the fine loop output signal, based at least in part on the input clock signal and the feedback clock signal.
Public/Granted literature
- US20080100357A1 Delay locked loop circuit, semiconductor device having the same and method of controlling the same Public/Granted day:2008-05-01
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