Invention Grant
- Patent Title: Internal voltage detection circuit and internal voltage generation device using the same
- Patent Title (中): 内部电压检测电路和使用其的内部电压发生装置
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Application No.: US11824974Application Date: 2007-06-29
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Publication No.: US07649397B2Publication Date: 2010-01-19
- Inventor: Jong Ho Son
- Applicant: Jong Ho Son
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2007-0016184 20070215
- Main IPC: G05F1/575
- IPC: G05F1/575 ; G05F1/567

Abstract:
An internal voltage detection circuit and an internal voltage generation device using the same are disclosed. The internal voltage detection circuit includes a first detect signal generator for generating a first detect signal to detect a level of an internal voltage corresponding to an operating temperature of a memory cell, a second detect signal generator for generating a second detect signal to detect a specific level of the internal voltage corresponding to a preset temperature, and a detect signal clamp unit for comparing a level of the first detect signal and a level of the second detect signal with each other and clamping the first detect signal according to a result of the comparison.
Public/Granted literature
- US20080198677A1 Internal voltage detection circuit and internal voltage generation device using the same Public/Granted day:2008-08-21
Information query
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