Invention Grant
- Patent Title: Back gate biasing overshoot and undershoot protection circuitry
- Patent Title (中): 后门偏置过冲和下冲保护电路
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Application No.: US11237499Application Date: 2005-09-28
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Publication No.: US07649400B2Publication Date: 2010-01-19
- Inventor: John E. Esquivel
- Applicant: John E. Esquivel
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
The signal switch has flat resistance across the input/output voltage range when in the ON state while still isolating input/output nodes from overshoots and undershoots when in the off state. The signal switch includes: a p channel switch coupled between a first input/output node and a second input/output node; an n channel switch coupled in parallel with the p channel switch; an overshoot protection block having a first output coupled to a backgate of the p channel switch, a first input coupled to the first input/output node, a second input coupled to the second input/output node, a third input coupled to a gate of the p channel switch, and a second output coupled to a p-rail voltage node; and an undershoot protection block having a first output coupled to a backgate of the n channel switch, a first input coupled to the first input/output node, a second input coupled to the second input/output node, a third input coupled to a gate of the n channel switch, and a second output coupled to an n-rail voltage node.
Public/Granted literature
- US20070069797A1 Back gate biasing overshoot and undershoot protection circuitry Public/Granted day:2007-03-29
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