Invention Grant
- Patent Title: Band pass filter
- Patent Title (中): 带通滤波器
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Application No.: US11905786Application Date: 2007-10-04
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Publication No.: US07649431B2Publication Date: 2010-01-19
- Inventor: Yun Hee Cho , Yun Hwi Park
- Applicant: Yun Hee Cho , Yun Hwi Park
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0105227 20061027; KR10-2006-0105228 20061027
- Main IPC: H03H7/00
- IPC: H03H7/00 ; H01P7/00

Abstract:
There is provided a multi-layered band pass filter capable of improving a stop characteristic out of a pass band and reducing the entire size of the filter. The multi-layered band pass filter includes a ceramic laminated body having at least first to fifth dielectric layers laminated sequentially therein; first and second resonators having symmetrical patterns of first and second inductors formed on the first dielectric layer, and symmetrical patterns of first and second capacitors formed on the second dielectric layer so that they are at least partially overlapped with the patterns of the first and second inductors; a pattern of first and second load capacitors electrically capacitively coupled respectively to ends of the first and second resonators formed on the third dielectric layer; a pattern of first and second notching capacitors electrically capacitively coupled respectively to the other ends of the first and second resonators formed on the third dielectric layer; and first and second ground planes formed respectively on the fourth and fifth dielectric layers, wherein each of the patterns of the first and second inductors is composed of a low impedance portion formed of wide-width lines and a high impedance portion formed of meander-type narrow-width lines from the low impedance portion.
Public/Granted literature
- US20080100401A1 Multi-layered band pass filter Public/Granted day:2008-05-01
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