Invention Grant
- Patent Title: Varistor body and varistor
- Patent Title (中): 压敏电阻体和变阻器
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Application No.: US11727512Application Date: 2007-03-27
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Publication No.: US07649436B2Publication Date: 2010-01-19
- Inventor: Mutsuko Nakano
- Applicant: Mutsuko Nakano
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-098786 20060331
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A preferred varistor body has a structure of alternately laminated internal electrode layer and varistor layer made of a varistor material. The varistor layer has a composition containing Zn, Co, Pr, Li, and Zr. The analysis of varistor body in the depth direction from the surface thereof gives the Li content of 0.08 parts by mass or less to 100 parts by mass of the sum of Zn, Co, and Pr contents at a level of 2 μm at the surface side above the reference depth where the Zr content becomes almost constant.
Public/Granted literature
- US20070229209A1 Varistor body and varistor Public/Granted day:2007-10-04
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