Invention Grant
- Patent Title: Solid state image sensors
- Patent Title (中): 固态图像传感器
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Application No.: US11145438Application Date: 2005-06-03
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Publication No.: US07649560B2Publication Date: 2010-01-19
- Inventor: Robert Henderson
- Applicant: Robert Henderson
- Applicant Address: GB Marlow-Buckinhamshire
- Assignee: STMicroelectronics Limited
- Current Assignee: STMicroelectronics Limited
- Current Assignee Address: GB Marlow-Buckinhamshire
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Agent Lisa K. Jorgenson
- Priority: EP04253372 20040605
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H01L31/113

Abstract:
A pinned-photodiode image sensor using shared output amplifiers, for example output amplifiers in the 2.5T arrangement has transfer gate control lines alternating or cross-coupled between successive columns or adjacent rows. This assists in removing row-row mismatches. In preferred embodiments, the approach is applied to Bayer pattern RGB sensors, and allows the gain and/or the exposure of green pixels to be controlled separately from those of red and blue pixels.
Public/Granted literature
- US20050269609A1 Solid state image sensors Public/Granted day:2005-12-08
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