Invention Grant
- Patent Title: Electrostatic discharge protected circuits
- Patent Title (中): 静电放电保护电路
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Application No.: US11521293Application Date: 2006-09-14
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Publication No.: US07649722B2Publication Date: 2010-01-19
- Inventor: Steven Thijs , Natarajan Mahadeva Iyer , Dimitri Linten
- Applicant: Steven Thijs , Natarajan Mahadeva Iyer , Dimitri Linten
- Applicant Address: BE Leuven
- Assignee: Interuniversitair Microelektronica Centrum (IMEC)
- Current Assignee: Interuniversitair Microelektronica Centrum (IMEC)
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H3/08

Abstract:
A method for designing an ESD protected analog circuit is described. The method includes creating an analog circuit design comprising a plurality of interconnected functional components and circuit-level ESD protection components with predetermined electric properties for achieving a predetermined analog performance during normal operation of the circuit as well as a predetermined ESD robustness during an ESD event on the circuit. At least one ESD event is simulated on the analog circuit design to identify at least one weak spot in the circuit. Component-level ESD protection components are added into the analog circuit design around each identified weak spot to reduce failure of the weak spot during an ESD event.
Public/Granted literature
- US20070058308A1 Electrostatic discharge protected circuits Public/Granted day:2007-03-15
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