Invention Grant
US07649765B2 Magnetic memory cell and method of fabricating same 有权
磁存储单元及其制造方法

  • Patent Title: Magnetic memory cell and method of fabricating same
  • Patent Title (中): 磁存储单元及其制造方法
  • Application No.: US11964359
    Application Date: 2007-12-26
  • Publication No.: US07649765B2
    Publication Date: 2010-01-19
  • Inventor: Krishnakumar Mani
  • Applicant: Krishnakumar Mani
  • Applicant Address: US CA Santa Clara
  • Assignee: Magsil Corporation
  • Current Assignee: Magsil Corporation
  • Current Assignee Address: US CA Santa Clara
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Magnetic memory cell and method of fabricating same
Abstract:
A magnetic memory cell in which a sensor is magnetically coupled to a magnetic media wherein the separation of the magnetic media from the sensor permits each to be magnetically optimized separate from the other, thus improving defect tolerance and minimizing the magnetic influence of neighboring cells in an array on one another. In an embodiment, the read circuitry is positioned so that no read current passes through the media during a read operation. In an alternative embodiment, processing is simplified but the read current is allowed to pass through the media.
Public/Granted literature
Information query
Patent Agency Ranking
0/0