Invention Grant
- Patent Title: Delayed activation of selected wordlines in memory
- Patent Title (中): 延迟激活内存中选定的字线
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Application No.: US11657951Application Date: 2007-01-25
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Publication No.: US07649783B2Publication Date: 2010-01-19
- Inventor: Xiaojun Yu , Jin-man Han
- Applicant: Xiaojun Yu , Jin-man Han
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/32 ; G11C16/26 ; G11C16/08

Abstract:
Apparatus, systems, and methods may operate to receive an external read command at a control circuit coupled to a memory array. Individual wordline activation may be delayed according to a delay period determined by a read level voltage magnitude associated with a plurality of memory cells included in the array.
Public/Granted literature
- US20080181032A1 Read operation control sequencing apparatus, systems, and methods Public/Granted day:2008-07-31
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