A memory architecture includes at least one matrix of memory cells of the EEPROM type organized in rows or word lines and columns or bit lines. Each memory cell includes a floating gate cell transistor and a selection transistor and is connected to a source line shared by the matrix. The memory cells are organized in words, all the memory cells belonging to a same word being driven by a byte switch, which is, in turn, connected to at least one control gate line. The memory cells further have accessible substrate terminals connected to a first additional line.