Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11846981Application Date: 2007-08-29
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Publication No.: US07649787B2Publication Date: 2010-01-19
- Inventor: Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant: Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Cook Alex Ltd.
- Priority: JP2006-240540 20060905
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A memory circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells. Configurations of the plurality of memory cells are determined depending on the data (“high” or “low”) which is stored in the memory cells. Data array such as a program stored in the memory circuit is analyzed in advance. In the case where “high” is the majority data, memory cells storing “high” are formed with vacant cells in which a semiconductor element is not formed.
Public/Granted literature
- US20080259693A1 Semiconductor Device Public/Granted day:2008-10-23
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